SI4830ADY-T1-E3 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4830ADY
Vishay Siliconix
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
V_GS(th)
I_GSS
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 85 °C
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
I_D(on)
R_DS(on)
g_fs
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 7.5 A
V_GS = 4.5 V, I_D = - 6.5 A
V_DS = 15 V, I_D = 7.5 A
Diode Forward Voltage^b
V_SD
I_S= 1 A, V_GS = 0 V
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_DS = 15 V, V_GS = 4.5 V, I_D = 7.5 A
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
Source-Drain Reverse Recovery Time
t_rr
I_F = 1.7 A, dI/dt = 100 µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
1.4
20
0.5
Typ.^a
0.017
0.024
19
0.75
0.47
7
2.9
2.5
1.5
9
10
19
9
35
32
Max. Unit
3.0
V
± 100 nA
1
100
µA
15
2000
A
0.022
Ω
0.030
S
1.2
V
0.5
11
nC
2.4
Ω
15
17
30
ns
15
55
55
SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Forward Voltage Drop
V_F
I_F = 1.0 A
I_F = 1.0 A, T_J = 125 °C
V_R = 30 V
Maximum Reverse Leakage Current
I_rm
V_R = 30 V, T_J = 100 °C
V_R = - 30 V, T_J = 125 °C
Junction Capacitance
C_T
V_R = 10 V
Typ.
0.47
0.36
0.004
0.7
3.0
50
Max.
Unit
0.50
V
0.42
0.100
10
mA
20
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72021
S09-0868-Rev. G, 18-May-09