SI4830ADY-T1-E3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4830ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.022 at V_GS = 10 V
0.030 at V_GS = 4.5 V
I_D (A)
7.5
6.5
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
V_SD (V)
Diode Forward Voltage
30
0.50 at 1 A
I_F (A)
2.0
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT^® Plus Schottky
• Si4830DY Pin Compatible
• PWM Optimized
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Asymmetrical Buck-Boost DC/DC Converter
D₁
S₁/D_{2 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 S₁/D₂
5 S₁/D₂
Ordering Information: Si4830ADY-T1-E3 (Lead (Pb)-free)
Si4830ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G₁
S₁
N-Channel MOSFET
D₂
Schottky Diode
G₂
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
I_DM
7.5
5.7
6.0
4.6
30
Continuous Source Current (Diode Conduction)^a
I_S
1.7
0.9
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25 °C
T_A = 70 °C
P_D
T_J, T_stg
2.0
1.1
1.3
0.7
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Symbol
R_thJA
R_thJF
MOSFET
Typ.
Max.
52
62.5
93
110
35
40
SCHOTTKY
Typ.
Max.
53
62.5
93
110
35
40
Unit
V
A
W
°C
Unit
°C/W
Document Number: 72021
S09-0868-Rev. G, 18-May-09
www.vishay.com
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