SI4830ADY-T1-E3 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4830ADY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.06
10
0.05
T_J = 150 °C
1
T_J = 25 °C
0.04
0.03
I_D = 7.5 A
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.00
0
2
4
6
8
10
V_GS ^{- Gate-to-Source Voltage (V)}
On-Resistance vs. Gate-to-Source Voltage
100
0.2
80
I_D = 250 µA
0.0
60
- 0.2
40
- 0.4
20
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
10 ^-3
10 ^-2
10 ^-1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
www.vishay.com
4
1
0.1
T_C = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_DS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Foot
Document Number: 72021
S09-0868-Rev. G, 18-May-09