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SI4812DY Datasheet, PDF (5/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
5