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| SI4812DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode | |||
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Si4812DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.018 @ VGS = 10 V
0.028 @ VGS = 4.5 V
ID (A)
9
7.3
FEATURES
D LITTLE FOOTr Plus Power MOSFET
D 100% Rg Tested
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V @ 1.0 A
IF (A)
1.4
D
SO-8
S1
S2
S3
G4
Top View
8D
7D
6D
5D
Ordering Information:
Si4812DY
Si4812DY-T1 (with Tape and Reel)
Si4812DYâE3 (Lead (Pb)-Free)
Si4812DY-T1âE3 (Lead (Pb)-Free with Tape and Reel)
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Symbol
VDS
10 sec
Steady State
30
30
Gate-Source Voltage (MOSFET)
VGS
"20
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b
Pulsed Drain Current (MOSFET)
TA = 25_C
TA = 70_C
Continuous Source Current (MOSFET Diode Conduction)a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a, b
Maximum Power Dissipation (Schottky)a, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
9
6.9
7.5
5.6
50
2.1
1.2
1.4
0.8
30
2.5
1.4
1.6
0.9
2.0
1.2
1.3
0.8
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Maximum Junction-to-Ambient (t v 10 sec)a
Maximum Junction-to-Ambient (t = steady state)a
MOSFET
Schottky
MOSFET
Schottky
RthJA
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71775
S-41426âRev. G, 26-Jul-04
Typical
40
50
72
85
Maximum
50
60
90
100
Unit
_C/W
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