SI4812DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.10
On-Resistance vs. Gate-to-Source Voltage
T_J = 150_C
10
1
T_J = 25_C
0.08
0.06
I_D = 9.0 A
0.04
0.02
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Reverse Current (Schottky)
20
10
1
30 V
0.1
10 V
0.01
0.00
0
50
40
30
20
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Single Pulse Power (MOSFET)
10
0.001
20 V
0.0001
0
2
25
50
75
100 125 150
T_J − Junction Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
1
Duty Cycle = 0.5
100 600
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^−4
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 72_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71775
S-41426—Rev. G, 26-Jul-04