SI4812DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4812DY
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Schottky Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 100_C
V_DS = 30 V, V_GS = 0 V, T_J = 125_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 9 A
V_GS = 4.5 V, I_D = 7.3 A
V_DS = 15 V, I_D = 9 A
I_S = 1.0 A, V_GS = 0 V
I_S = 1.0 A, V_GS = 0 V, T_J = 125_C
1
3
"100
0.004
0.100
0.7
10
3.0
20
20
0.012
0.018
0.019
0.028
23
0.45
0.50
0.33
0.42
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 5 V, I_D = 9 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 1.0 A, di/dt = 100 A/ms
13
24
4
5.7
0.2
2.4
16
25
10
20
35
50
13
20
35
70
Unit
V
nA
mA
A
W
S
V
nC
W
ns
www.vishay.com
2
Document Number: 71775
S-41426—Rev. G, 26-Jul-04