SI4642DY Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
45
Si4642DY
Vishay Siliconix
36
27
18
9
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
6
1.2
4
0.8
2
0.4
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0
25
50
75
100 125 150
T_A - Case Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 74430
S-71069-Rev. A, 21-May-07
www.vishay.com
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