SI4642DY Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4642DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.015
I_D = 20 A
10
T_J = 150 °C
0.012
0.009
T_J = 25 °C
1
0.006
0.003
125 °C
25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.1
0.01
0.001
0.0001
30 V
20 V
10 V
0.000
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
0.00001
40
0.000001
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current (Schottky)
100
*Limited
by r_DS(on)
10
0
0.001
0.01
0.1
1
10
Time (sec)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
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4
1
100 ms
0.1
0.01
0.01
*V_GS
1s
10 s
dc
T_C = 25 °C
Single Pulse
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
Document Number: 74430
S-71069-Rev. A, 21-May-07