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| SI4642DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode | |||
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New Product
Si4642DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
30
0.00375 at VGS = 10 V
0.0047 at VGS = 4.5 V
ID (A)a
34
30
Qg (Typ)
35.7 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4642DY-T1-E3 (Lead (Pb)-free)
FEATURES
⢠SkyFET⢠Monolithic TrenchFET® Power
MOSFET and Schottky Diode
⢠100 % Rg and UIS Tested
APPLICATIONS
⢠Notebook CPU Core
⢠Buck Converter
⢠Synchronous Rectifier Switch
RoHS
COMPLIANT
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
34
27
22.7b, c
18b, c
70
7
3.1b, c
45
101
7.8
5
3.5b, c
2.2b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
Typ
t ⤠10 sec
RthJA
29
Steady State
RthJF
13
Max
35
16
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 80 °C/W.
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 74430
S-71069-Rev. A, 21-May-07
www.vishay.com
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