SI4642DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4642DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
V_GS = 10 thru 4 V
56
42
28
14
0
0.0
0.0050
3V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.2
1.0
0.8
0.6
0.4
T_C = 125 °C
0.2
25 °C
- 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
7000
0.0045
0.0040
V_GS = 4.5 V
6000
C_iss
5000
4000
0.0035
V_GS = 10 V
0.0030
0.0025
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
3000
2000
1000
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
1.7
I_D = 20 A
1.5
1.3
1.1
V_GS = 4.5 V
V_GS = 10 V
2
0.9
0
0 10 20 30 40 50 60 70 80
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74430
S-71069-Rev. A, 21-May-07
www.vishay.com
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