SI4562DY Datasheet, PDF (5/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si4562DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 5, 4.5, 4, 3.5 V
32
3V
32
24
16
8
0
0
0.10
2.5 V
2V
1.5 V
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
24
16
8
0
0
4500
P-CHANNEL
Transfer Characteristics
T_C = –55_C
25_C
125_C
1
2
3
4
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.08
3600
C_iss
0.06
V_GS = 2.5 V
0.04
0.02
V_GS = 4.5 V
2700
1800
900
C_oss
C_rss
0
0
8
16
24
32
40
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
4
I_D = 6.2 A
3
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 6.2 A
1.2
2
1.0
1
0.8
0
0
5
10
15
20
25
Q_g – Total Gate Charge (nC)
0.6
–50 –25
0 25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 70717
S-54940—Rev. A, 29-Sep-97
www.vishay.com S FaxBack 408-970-5600
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