SI4562DY Datasheet, PDF (2/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si4562DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 mA
V_DS = V_GS, I_D = –250 mA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = "12 V
Zero Gate Voltage Drain Current
On-State Drain Current^b
I_DSS
I_D(on)
Drain-Source On-State Resistance^b
r_DS(on)
Forward Transconductance^b
g_fs
Diode Forward Voltage^b
V_SD
Dynamic^a
V_DS = 20 V, V_GS = 0 V
V_DS = –20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55_C
V_DS = –20 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 4.5 V
V_DS v –5 V, V_GS = –4.5 V
V_GS = 4.5 V, I_D = 7.1 A
V_GS = –4.5 V, I_D = –6.2 A
V_GS = 2.5 V, I_D = 6.0 A
V_GS = –2.5 V, I_D = –5.0 A
V_DS = 10 V, I_D = 7.1 A
V_DS = –10 V, I_D = –6.2 A
I_S = 1.7 A, V_GS = 0 V
I_S = –1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
N-Channel
V_DS = 10 V, V_GS = 4.5 V, I_D = 7.1 A
Q_gs
P-Channel
V_DS = –10 V, V_GS = –4.5 V, I_D = –6.2 A
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
N-Channel
V_DD = 10 V, R_L =10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
P-Channel
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
I_F = –1.7 A, di/dt = 100 A/ms
Min Typ^a Max Unit
N-Ch
0.6
P-Ch –0.6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
20
P-Ch
–20
V
"100
nA
"100
1
–1
mA
5
–5
A
N-Ch
0.019 0.025
P-Ch
N-Ch
0.027 0.033
W
0.025 0.035
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.040 0.050
27
S
20
1.2
V
–1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
25
50
22
35
6.5
nC
7
4
3.5
40
60
27
50
40
60
32
50
90
150
ns
95
150
40
60
45
70
40
80
40
80
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2-2
Document Number: 70717
S-54940—Rev. A, 29-Sep-97