SI4562DY Datasheet, PDF (4/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si4562DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
40
T_J = 150_C
10
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
I_D = 7.1 A
0.06
T_J = 25_C
0.04
0.02
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
30
0.2
24
–0.0
I_D = 250 mA
18
–0.2
12
–0.4
6
–0.6
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.10
1.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10.00
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70717
S-54940—Rev. A, 29-Sep-97