SI4562DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – N- and P-Channel 2.5-V (G-S) MOSFET

Si4562DY
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
N-Channel
20
P-Channel
–20
0.025 @ V_GS = 4.5 V
0.035 @ V_GS = 2.5 V
0.033 @ V_GS = –4.5 V
0.050 @ V_GS = –2.5 V
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
I_D (A)
"7.1
"6.0
"6.2
"5.0
D₁ D₁
S₂
G₂
G₁
S₁
N-Channel MOSFET
D₂ D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
–20
"12
"12
"7.1
"6.2
"5.7
"4.9
"40
"40
1.7
–1.7
2.0
2.0
1.3
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70717
S-54940—Rev. A, 29-Sep-97
Symbol
R_thJA
N- or P-Channel
62.5
Unit
_C/W
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