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SI4511DY Datasheet, PDF (5/8 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET | |||
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Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
NâCHANNEL
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10â4
10â3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
10â2
10â1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
10â2
10â1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
VGS = 5 thru 3.5 V
3V
32
32
1
10
P-CHANNEL
Transfer Characteristics
TC = â55_C
25_C
24
2.5 V
24
125_C
16
8
0
0.0
2V
1.5 V
0.4
0.8
1.2
1.6
2.0
VDS â Drain-to-Source Voltage (V)
Document Number: 72223
S-41496âRev. B, 09-Aug-04
16
8
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS â Gate-to-Source Voltage (V)
www.vishay.com
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