SI4511DY Datasheet, PDF (4/8 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.05
10
T_J = 150_C
T_J = 25_C
0.04
0.03
0.02
I_D = 3 A
I_D = 9.6 A
0.01
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
−0.0
Single Pulse Power
30
25
20
−0.2
15
−0.4
10
−0.6
5
−0.8
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
10^−2
10^−1
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
P(t) = 0.0001
10
P(t) = 0.001
1
I_D(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
T_C = 25_C
Single Pulse
BV_DSS Limited
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
1
10
Time (sec)
100
600
www.vishay.com
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Document Number: 72223
S-41496—Rev. B, 09-Aug-04