SI4511DY Datasheet, PDF (1/8 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si4511DY
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
−20
r_DS(on) (W)
0.0145 @ V_GS = 10 V
0.017 @ V_GS = 4.5 V
0.033 @ V_GS = −4.5 V
0.050 @ V_GS = −2.5 V
I_D (A)
9.6
8.6
−6.2
−5
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Level Shift
D Load Switch
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁
G₁
Top View
S₁
Ordering Information: Si4511DY
Si4511DY-T1 (with Tape and Reel)
Si4511DY—E3 (Lead (Pb)-Free)
Si4511DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
S₂
G₂
D₂
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol ^{10 sec. Steady State 10 sec. Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
−20
"16
"12
9.6
7.2
−6.2
−4.6
7.7
5.8
−4.9
−3.7
40
−40
1.7
0.9
−1.7
0.9
2
1.1
2
1.1
1.3
0.7
1.3
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJF
N-Channel
Typ
Max
50
62.5
85
110
30
40
P- Channel
Typ
Max
50
62.5
90
110
30
35
Unit
_C/W
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