SI4511DY Datasheet, PDF (3/8 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 10 thru 4 V
3V
32
32
N−CHANNEL
Transfer Characteristics
24
24
16
8
2V
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
V_DS − Drain-to-Source Voltage (V)
0.020
On-Resistance vs. Drain Current
16
T_C = 125_C
8
25_C
−55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS − Gate-to-Source Voltage (V)
2000
Capacitance
0.015
0.010
V_GS = 4.5 V
0.005
V_GS = 10 V
1600
C_iss
1200
800
C_oss
C_rss
400
0.000
0
10
8
16
24
32
40
I_D − Drain Current (A)
Gate Charge
8
V_DS = 10 V
I_D = 9.6 A
6
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
1.4
V_GS = 10 V
I_D = 9.6 A
1.2
4
1.0
2
0.8
0
0
3
6
9 12 15 18 21 24
Q_g − Total Gate Charge (nC)
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
www.vishay.com
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