SI4503DY Datasheet, PDF (5/7 Pages) Vishay Siliconix – N- and P-Channel MOSFET

New Product
Si4503DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
N−CHANNEL
0.01
10^–4
0.02
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
2.5 V
16
16
V_GS = 5 thru 3 V
12
2V
12
1.8 V
8
8
1
10
P−CHANNEL
Transfer Characteristics
T_C = –55_C
25_C
125_C
1.5 V
4
1V
0
0
1
2
3
4
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
0.16
V_GS = 1.8 V
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
2500
Capacitance
C_iss
2000
0.12
1500
0.08
0.04
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D – Drain Current (A)
Document Number: 71770
S-20894—Rev. B, 17-Jun-02
1000
C_oss
500
C_rss
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
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