SI4503DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N- and P-Channel MOSFET

New Product
N- and P-Channel MOSFET
Si4503DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
N-Channel
(Channel 2)
30
P-Channel
(Channel 1)
–8
r_DS(on) (W)
0.018 @ V_GS = 10 V
0.027 @ V_GS = 4.5 V
0.042 @ V_GS = –4.5 V
0.060 @ V_GS = –2.5 V
I_D (A)
8.8
7.2
–4.5
–3.7
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Level Shift
D Load Switch
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D2
6 ^D2
5 ^D2
S₁
G₁
D₁
D₂
G₂
S₂
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
N-Channel
P-Channel
Symbol
10 sec. Steady State 10 sec. Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
T_A = 25_C
T_A = 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
8.8
6.5
–4.5
7.0
5.2
–3.6
30
2.0
1.1
–1.2
2.27
1.25
1.38
1.45
0.8
0.88
–55 to 150
–8
"8
–3.8
–3.0
–20
0.9
1.0
0.64
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 71770
S-20894—Rev. B, 17-Jun-02
t v 10 sec
Steady-State
Steady-State
Symbol
R_thJA
R_thJF
N-Channel
Typ
Max
45
55
85
100
25
30
P- Channel
Typ
Max
75
90
100
125
53
65
Unit
_C/W
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