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SI4503DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N- and P-Channel MOSFET | |||
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New Product
Si4503DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
VGS = 10 thru 4 V
40
40
NâCHANNEL
Transfer Characteristics
30
30
20
3V
10
0
0
2
4
6
8
10
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
0.04
0.03
0.02
0.01
VGS = 4.5 V
VGS = 10 V
0.00
0
6
12
18
24
30
ID â Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 8.8 A
8
6
4
2
0
0
5
10
15
20
25
Qg â Total Gate Charge (nC)
Document Number: 71770
S-20894âRev. B, 17-Jun-02
20
TC = 125_C
10
25_C
â55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS â Gate-to-Source Voltage (V)
1800
Capacitance
1500
Ciss
1200
900
600
Coss
300
0
0
Crss
6
12
18
24
30
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6
ID = 8.8 A
1.4
1.2
1.0
0.8
0.6
0.4
â50 â25 0
25 50 75 100 125 150
TJ â Junction Temperature (_C)
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