SI4503DY Datasheet, PDF (2/7 Pages) Vishay Siliconix – N- and P-Channel MOSFET

Si4503DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 0 V, V_GS = "8 V
V_DS = 24 V, V_GS = 0 V
V_DS = –6.4 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 55_C
V_DS = –6.4 V, V_GS = 0 V, T_J = 55_C
V_DS = 5 V, V_GS = 10 V
V_DS = –5 V, V_GS = –4.5 V
V_GS = 10 V, I_D = 8.8 A
V_GS = –4.5 V, I_D = –4.5 A
V_GS = 4.5 V, I_D = 7.2 A
V_GS = –2.5 V, I_D = –3.7 A
V_DS = 15 V, I_D = 8.8 A
V_DS = –15 V, I_D = –4.5 A
I_S = 2.0 A, V_GS = 0 V
I_S = –1.2 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
N-Channel
V_DS = 15 V, V_GS = 5 V, I_D = 8.8 A
Q_gs
P-Channel
V_DS = –4 V, V_GS = –5 V, I_D = –4.5 A
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
N-Channel
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
P-Channel
V_DD = –4 V, R_L = 4 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
I_F = 1.7 A, di/dt = 100 A/ms
Min Typ^a Max Unit
N-Ch
0.8
V
P-Ch –0.45
N-Ch
P-Ch
"100
nA
"100
N-Ch
1
P-Ch
N-Ch
–1
mA
5
P-Ch
–5
N-Ch
30
A
P-Ch
–20
N-Ch
P-Ch
N-Ch
P-Ch
0.015 0.018
0.034 0.042
W
0.022 0.027
0.048 0.060
N-Ch
20
S
P-Ch
13
N-Ch
P-Ch
0.71
1.1
V
–0.70 –1.1
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
14.5
20
15
25
3.3
nC
3.0
6.6
2.0
13
20
20
40
9
18
50
100
35
50
ns
110
220
17
30
60
120
35
70
60
100
www.vishay.com
2
Document Number: 71770
S-20894—Rev. B, 17-Jun-02