IRFP254N Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

IRFP254N, SiHFP254N
Vishay Siliconix
25
20
15
10
5
0
25
50
75 100 125 150 175
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
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V_DS
V_GS
R_G
R_D
D.U.T.
V_GS
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
PDM
(THERMAL RESPONSE)
0.0001
0.001
t _1, Rectangular Pulse Duration (s)
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
www.vishay.com
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