IRFP254N Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

IRFP254N, SiHFP254N
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
Top
Bottom
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
100
TJ = 175 °C
1
4.5 V
10
TJ = 25 °C
0.1
0.1
20 µs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
1
4.0
5.0
6.0
V_DS = 50 V
20 µs PULSE WIDTH
7.0
8.0
9.0
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10
4.5 V
1
0.1
20 µs PULSE WIDTH
TJ = 175 °C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
4.0
ID = 23 A
3.0
2.0
1.0
0.0
V_GS = 10 V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
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