IRFP254N Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

IRFP254N, SiHFP254N
Vishay Siliconix
4000
3000
2000
1000
V_GS = 0 V,
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
f = 1 MHz
SHORTED
Ciss
Coss
Crss
0
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
TJ = 175 °C
10
1
TJ = 25 °C
0.1
0.2
V_GS = 0 V
0.4
0.6
0.8
1.0
1.2
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 14 A
16
V_DS = 200 V
V_DS = 125 V
V_DS = 50 V
12
8
4
For Test Circuit
See Fig. 13
0
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATING IN THIS AREA LIMITED
BY RDS(on)
10
100 µs
1 ms
1
TC = 25 °C
TJ = 175 °C
0.1 ^{Single Pulse}
1
10
10 ms
100
1000
10000
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08