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IRFP254N Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)
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IRFP254N, SiHFP254N
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.68
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 14 Ab
VDS = 25 V, ID = 14 A
250
-
-
V
-
0.33
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.125 Ω
15
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
2040
-
-
260
-
pF
-
62
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
ID = 14 A, VDS = 200 V,
see fig. 6 and 13b
-
-
VGS = 10 V
-
VDD = 125 V, ID = 14 A,
-
RG = 3.6 Ω, see fig. 10b
-
-
-
100
-
17
nC
-
44
14
-
34
-
ns
37
-
29
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
-
5.0
-
package and center of
nH
G
LS
die contact
-
13
-
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
23
A
-
-
92
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
-
-
1.3
V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
-
210
310
ns
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs
-
1.7
2.6
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.
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Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
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