IRFB13N50A Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

IRFB13N50A, SiHFB13N50A
Vishay Siliconix
R_D
15
V_DS
V_GS
D.U.T.
12
R_G
+- _VDD
10 V
9
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
6
V_DS
90 %
3
0
25
50
75
100
125
150
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P _DM
t₁
t₂
Notes:
1. Duty factor D = t₁ /t₂
2. Peak T_J = P_DM x Z_thJC + T_C
0.001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
V_DS
L
Driver
R_G
20 V
t_p
D.U.T.
I_AS
0.01 Ω
+
- ^VD^AD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91095
S-81393-Rev. A, 07-Jul-08
V_DS
t_p
I_AS
Fig. 12b - Unclamped Inductive Waveforms
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