IRFB13N50A Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

IRFB13N50A, SiHFB13N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
81
20
36
Single
D
TO-220
0.450
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Lower Gate Charge Q_g Results in Simpler Drive
Reqirements
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supplies
• High Speed Power Switching
TO-220
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
SiHFB13N50A
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
T_C = 25 °C
V_GS at 10 V
I_D
T_C = 100 °C
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
E_AS
Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 5.7 mH, R_G = 25 Ω, I_AS =14 A, dV/dt = 7.6 V/ns (see fig. 12a).
c. I_SD ≤ 14 A, dI/dt ≤ 250 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91095
S-81393-Rev. A, 07-Jul-08
LIMIT
500
± 30
14
9.1
56
2.0
560
14
25
250
9.2
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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