IRFB13N50A Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

IRFB13N50A, SiHFB13N50A
Vishay Siliconix
100000
10000
1000
100
V_GS = 0V, f = 1 MHZ
C_iss = C_gs + C_gd, C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
Ciss
Coss
10
Crss
1
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
12
I_D = 14A
10
V_DS = 400V
V_DS = 250V
V_DS = 100 V
7
5
2
0
0
12
24
36
48
60
O_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.2
0.5
0.8
V_SD, Source-to-Drain Voltage (V)
V_GS = 0 V
1.1
1.4
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R_DS(on)
10
100μsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10
100
10msec
1000
10000
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91095
S-81393-Rev. A, 07-Jul-08