IRFB13N50A Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

IRFB13N50A, SiHFB13N50A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
T_J = 150 °C
1
4.5V
0.1
0.01
0.1
20μs PULSE WIDTH
T_J = 25 °C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
T_J = 25 °C
1
0.1
4
V_DS = 50
20μs PULSE WIDTH
6
8
10
12
14
16
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
0.1
0.1
20μs PULSE WIDTH
T_J = 150 °C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
I_D = 14A
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91095
S-81393-Rev. A, 07-Jul-08
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