IRF9Z30 Datasheet, PDF (5/8 Pages) International Rectifier – P-CHANNEL 50 VOLT POWER MOSFETS

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2000
1600
1200
800
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
400
0
1
C_rss
2
5 10 2
5 10²
- V_DS, Drain-to-Source Voltage (V)
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
IRF9Z30, SiHF9Z30
Vishay Siliconix
2.0
80 μs Pulse Test
1.6
1.2
V_GS = - 10 V
0.8
0.4
0.0
0
V_GS = - 20 V
12
24
36
48
60
- I_D, Drain Current (A)
Fig. 11 - Typical On-Resistance vs. Drain Current
20
I_D = - 18 A
16
12
V_DS = - 40 V
8
4
For test circuit
see figure 17
0
0
10
20
30
40
50
Q_g, Total Gate Charge (nC)
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
20
16
12
SiHF9Z30
8
SiHF9Z32
4
0
25
50
75
100
125
150
T_C, Case Temperature (°C)
Fig. 12 - Maximum Drain Current vs. Case Temperature

S12-3048-Rev. A, 24-Dec-12
5
Document Number: 91459
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