IRF9Z30 Datasheet, PDF (1/8 Pages) International Rectifier – P-CHANNEL 50 VOLT POWER MOSFETS

www.vishay.com
IRF9Z30, SiHF9Z30
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 50
V_GS = - 10 V
39
0.14
10
15
Single
S
TO-220AB
FEATURES
• P-Channel Versatility
• Compact Plastic Package
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
G
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
S
geometry and unique processing of the power MOSFET
D
design achieve very low on-state resistance combined with
G
D
high transconductance and extreme device ruggedness.
P-Channel MOSFET
The p-channel power MOSFET’s are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common n-channel Power MOSFET’s such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with n-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF9Z30PbF
SiHF9Z30-E3
IRF9Z30
SiHF9Z30
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche Current)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
L = 100 μH
T_C = 25 °C
for 10 s
I_LM
I_L
P_D
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V_DD = - 25 V, starting T_J = 25 °C, L =100 μH, R_g = 25 
c. 0.063" (1.6 mm) from case.
LIMIT
- 50
± 20
- 18
- 11
- 60
0.59
- 60
- 3.1
74
- 55 to + 150
300^c
UNIT
V
A
W/°C
A
A
W
°C
S12-3048-Rev. A, 24-Dec-12
1
Document Number: 91459
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000