IRF9Z30 Datasheet, PDF (3/8 Pages) International Rectifier – P-CHANNEL 50 VOLT POWER MOSFETS

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9Z30, SiHF9Z30
Vishay Siliconix
25
- 10 V
80 μs Pulse Test
20
-8V
15
10
5
0
0
-7V
V_GS = - 5 V
-5V
-4V
5
10
15
20
25
- V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
25
80 μs Pulse Test
20
- 10 V
15
-8V
10
-7V
5
V_GS = - 5 V
0
0
1
2
3
-5V
-4V
4
5
- V_DS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
10²
80 µs Pulse Test
5 _{VDS = 2 x VGS}
2
10
5
2
1
5
2
T_J = 150 °C _{TJ = 25 °C}
0.1
0
2
4
6
8
10
- V_GS, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
10³
Operation in this Area Limited
5
by R_DS(on)
2
10²
SiHF9Z30
5 SiHF9Z32
2 ^SiHF9Z30
10 μs
100 μs
10 ^SiHF9Z32
1 μs
5
2
T_C = 25 °C
T_J = 150 °C
1 ^{Single Pulse}
1
2
5
10
2
10 μs
DC
5 10²
- V_DS, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
S12-3048-Rev. A, 24-Dec-12
3
Document Number: 91459
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000