IRF9610 Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

IRF9610, SiHF9610
Vishay Siliconix
Fig. 12 - Typical On-Resistance vs. Drain Current
Fig. 13 - Maximum Drain Current vs. Case Temperature
Fig. 14 - Power vs. Temperature Derating Curve
L
Vary t_p to obtain
required I_L
VGS = - 10 V tp
D.U.T.
V_DS
V_DD
-
+
EC
I_L
VDD = 0.5 VDS
0.05 Ω
EC = 0.75 VDS
Fig. 15 - Clamped Inductive Test Circult
Document Number: 91080
S-Pending-Rev. A, 20-Jun-08
V_DD
I_L
t_p
V_DS
E_C
Fig. 16 - Clamped Inductive Waveforms
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