IRF9610 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

IRF9610, SiHF9610
Vishay Siliconix
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 9 - Normalized On-Resistance vs. Temperature
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Breakdown Voltage vs. Temperature
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Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91080
S-Pending-Rev. A, 20-Jun-08