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IRF9610 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
◁
IRF9610, SiHF9610
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
6.4
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = -0.90 Ab
VDS = - 50 V, ID = - 0.90 Ab
- 200
-
- 2.0
-
-
-
-
0.90
-
- 0.23
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
3.0
-
V
V/°C
V
nA
µA
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
VGS = 0 V,
-
170
-
Coss
VDS = - 25 V,
-
50
-
pF
Crss
f = 1.0 MHz, see fig. 10
-
15
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
11
Qgs
VGS = - 10 V
ID = - 3.5 A, VDS = - 160 V,
see fig. 11 and 18b
-
-
7.0
nC
Qgd
-
-
4.0
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = - 100 V, ID = - 0.90 A,
RG = 50 Ω, RD = 11 Ω, see fig. 17b
-
8.0
-
-
15
-
ns
-
10
-
-
8.0
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
- 1.8
A
-
-
- 7.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 1.8 A, VGS = 0 Vb
-
-
- 5.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/µsb
240
360
ns
Qrr
-
1.7
2.6
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91080
S-Pending-Rev. A, 20-Jun-08
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