IRF9610 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

Power MOSFET
IRF9610, SiHF9610
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 200
V_GS = - 10 V
3.0
11
7.0
4.0
Single
S
TO-220
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRF9610PbF
SiHF9610-E3
IRF9610
SiHF9610
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V_DS
V_GS
T_C = 25
V_GS at - 10 V _{TC = 100}
I_D
Pulsed Drain Current^a
I_DM
Linear Derating Factor
Maximum Power Dissipation
Inductive Current, Clamp
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
I_LM
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not applicable.
c. I_SD ≤ - 1.8 A, dI/dt ≤ 70 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91080
S-Pending-Rev. A, 20-Jun-08
WORK-IN-PROGRESS
LIMIT
- 200
± 20
- 1.8
- 1.0
- 7.0
0.16
20
- 7.0
- 5.0
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
W
A
V/ns
°C
lbf · in
N·m
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