IRF610S Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

www.vishay.com
IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
V_DS
Vary t_p to obtain
required I_AS
R_g
10 V
t_p
L
D.U.T
I_AS
0.01 Ω
+
- ^VDD
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
V_DS
t_p
V_DD
I_AS
Fig. 12b - Unclamped Inductive Waveforms
140
I_D
120
Top 1.5 A
2.1 A
100
Bottom 3.3 A
80
60
40
20
V_DD = 50 V
0
25
50
75
100
125
150
91024_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S15-1659-Rev. D, 20-Jul-15
5
Document Number: 91024
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000