IRF610S Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

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IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
10¹
150 °C
10⁰
25 °C
10^-1
0.4
91024_07
V_GS = 0 V
0.8
1.2
1.6
2.0
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10²
5
2
10
5
2
1
5
2
0.1
5
2
10^-2
0.1 ²
Operation in this area limited
by R_DS(on)
100 µs
1 ms
10 ms
5₁
T_C = 25 °C
T_J = 150 °C
Single Pulse
2 5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
91024_08
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
91024_09
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_g
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
0 − 0.5
1
0.2
0.1
0.05
0.02
0.1 _0.01
Single Pulse
(Thermal Response)
10^-2
10^-5
10^-4
10^-3
10^-2
P_DM
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Peak T_j = P_DM x Z_thJC + T_C
0.1
1
10
91024_11
t₁, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S15-1659-Rev. D, 20-Jul-15
4
Document Number: 91024
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