IRF610S Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

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IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10¹
V_GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
10⁰
5.5 V
5.0 V
Bottom 4.5 V
10^-1
10^-1
91024_01
4.5 V
20 µs Pulse Width
T_C = 25 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
V_GS
Top 15 V
10 V
8.0 V
7.0 V
10⁰
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
10^-1
10^-1
91024_02
20 µs Pulse Width
T_C = 150 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
10⁰
10^-1
10^-2
4
91024_03
20 µs Pulse Width
V_DS = 50 V
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.5 _{ID = 3.3 A}
3.0 ^{VGS = 10 V}
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91024_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
300
250
200
150
100
50
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
C_rss
0
10⁰
91024_05
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
I_D = 3.3 A
16
V_DS = 160 V
V_DS = 100 V
12
V_DS = 40 V
8
4
0
0
91024_06
For test circuit
see figure 13
2
4
6
8
10
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-1659-Rev. D, 20-Jul-15
3
Document Number: 91024
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