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IRF610S Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET
◁
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IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient 
(PCB mount) c
RthJA
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
40
62
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Static
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.0 A b
VDS = 50 V, ID = 2.0 A b
Dynamic
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.3 A, VDS = 160 V
see fig. 6 and 13 b
VDD = 100 V, ID = 3.3 A,
Rg = 24 , RD = 30 
see fig. 10 b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
D
6 mm (0.25") from
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
MIN.
200
-
2.0
-
-
-
-
0.80
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.30
-
V/°C
-
4.0
V
- ± 100 nA
-
25
μA
-
250
-
1.5

-
-
S
140
-
53
-
pF
15
-
-
8.2
-
1.8 nC
-
4.5
8.2
-
17
-
ns
14
-
8.9
-
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
D
-
-
3.3
showing the 
integral reverse
G
A
Pulsed Diode Forward Current a
ISM
p - n junction diode
S
-
-
10
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.3 A, VGS = 0 V b
-
-
2.0
V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 3.3 A,
dI/dt = 100 A/μs b
-
150 310 ns
-
0.60 1.4 μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
S15-1659-Rev. D, 20-Jul-15
2
Document Number: 91024
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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