GB100TS60NPBF Datasheet, PDF (5/9 Pages) Vishay Siliconix – INT-A-PAK 'Half-Bridge' (Ultrafast Speed IGBT), 108 A

GB100TS60NPbF
INT-A-PAK "Half-Bridge" _{Vishay High Power Products}
(Ultrafast Speed IGBT), 108 A
100
90
80
4.7 ohm
70
60
27 ohm
50
40
30
47 ohm
20
10
0
0 20 40 60 80 100 120
I_F (A)
Fig. 11 - Typical Diode I_rr vs. I_F,
T_J = 125 °C
100
80
60
40
20
0
0
10
20
30
40
50
R_G (Ω)
Fig. 12 - Typical Diode I_rr vs. R_g,
T_J = 125 °C, I_F = 100 A
90
80
70
60
50
600
800 1000 1200 1400 1600 1800
dI_F / dt (A/μs)
Fig. 13 - Typical Diode I_rr vs. dI_F/dt,
T_J = 125 °C, V_CC = 360 V, I_F = 150 A, V_GE = 15 V
9
8
7
6
5
4
3
2
1
0
10
20
30
40
50
R_G (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
T_J = 125 °C, L = 200 μH, R_g = 10 Ω,
V_CC = 360 V, V_GE = 15 V
10
Ic = 100A
1
Ic = 50A
Ic = 25A
0.1
0
25
50
75
100 125
T_J - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs. Junction Temperature,
L = 200 μH, R_g = 10 Ω, V_CC = 360 V, V_GE = 15 V
2.5
2
1.5
1
0.5
0
20
40
60
80
100
I_C (A)
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current,
T_J = 125 °C, R_g1 = 4.7 V, R_g2 = 0 Ω, V_CC = 360 V, V_GE = 15 V
Document Number: 94501
Revision: 04-May-10
For technical questions, contact: [e-mail]
www.vishay.com
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