GB100TS60NPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – INT-A-PAK 'Half-Bridge' (Ultrafast Speed IGBT), 108 A

GB100TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 108 A
INT-A-PAK
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on) at 100 A, 25 °C
600 V
108 A
2.6 V
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low V_CE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive V_CE(on) temperature coefficient
• HEXFRED^® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al₂O₃ DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
I_CM
Clamped inductive load current
I_LM
Diode continuous forward current
I_F
Gate to emitter voltage
V_GE
Maximum power dissipation
P_D
Isolation voltage
V_ISOL
TEST CONDITIONS
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
T_C = 25 °C
T_C = 80 °C
Any terminal to case, t = 1 min
MAX.
600
108
74
200
200
106
69
± 20
390
219
2500
UNITS
V
A
V
W
V
Document Number: 94501
Revision: 04-May-10
For technical questions, contact: [e-mail]
www.vishay.com
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