GB100TS60NPBF Datasheet, PDF (3/9 Pages) Vishay Siliconix – INT-A-PAK 'Half-Bridge' (Ultrafast Speed IGBT), 108 A

GB100TS60NPbF
INT-A-PAK "Half-Bridge" _{Vishay High Power Products}
(Ultrafast Speed IGBT), 108 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
Junction to case per leg
IGBT
Diode
T_J, T_Stg
R_thJC
Case to sink per module
Mounting torque
case to heatsink
case to terminal 1, 2, 3
R_thCS
Weight
MIN.
- 40
-
-
-
-
-
-
TYP.
-
0.23
0.38
0.1
-
-
185
MAX.
150
0.32
0.64
-
4
3
-
UNITS
°C
°C/W
Nm
g
200
Vge = 18V
Vge = 15V
150 ^{Vge = 12V}
100
Vge = 9V
50
0
0
1
2
3
4
5
6
V_CE (V)
Fig. 1 - Typical IGBT Output Characteristics
T_J = 25 °C, t_p = 500 μs
200
Vge = 18V
Vge = 15V
Vge = 12V
150
100
Vge = 9V
50
0
0
1
2
3
4
5
6
V_CE (V)
Fig. 2 - Typical IGBT Output Characteristics
T_J = 125 °C, t_p = 500 μs
200
180
160
140
120
100
80
60
40
Tj = 125°C
20
Tj = 25°C
0
0
2
4
6
8
10
V_GE (V)
Fig. 3 - Typical Transfer Characteristics
V_CE = 20 V, t_p = 500 μs
5
4.5
Ic = 200A
4
3.5
Ic = 100A
3
2.5
Ic = 50A
2
1.5
0
20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature,
V_GE = 15 V, 500 μs pulse width
Document Number: 94501
Revision: 04-May-10
For technical questions, contact: [e-mail]
www.vishay.com
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