GB100TS60NPBF Datasheet, PDF (4/9 Pages) Vishay Siliconix – INT-A-PAK 'Half-Bridge' (Ultrafast Speed IGBT), 108 A

GB100TS60NPbF
Vishay High Power Products ^{INT-A-PAK "Half-Bridge"}
(Ultrafast Speed IGBT), 108 A
200
1000
150
td(off)
td(on)
100
100
tf
50
Tj = 125°C
Tj = 25°C
0
0.0
0.5
1.0
1.5
2.0
V_F (V)
Fig. 5 - Diode Forward Characteristics, t_p = 500 μs
tr
10
20
40
60
80
100
I (A)
Fig. 8 - Typical Switching Time vs. I_C
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
R_g = 4.7 Ω, V_GE = 15 V
160
140
120
100
80
DC
60
40
20
0
0 20 40 60 80 100 120
Maximum DC Collector Current (A)
Fig. 6 - Maximum Collector Current vs.
Case Temperature
1400
1200
1000
Eoff
800
600
Eon
400
200
0
0 20 40 60 80 100 120
I_C (A)
Fig. 7 - Typical Energy Loss vs. I_C, T_J = 125 °C,
L = 200 μH, V_CC = 360 V, R_g = 4.7 Ω, V_GE = 15 V
5000
4500
4000
3500
Eon
3000
2500
Eoff
2000
1500
1000
500
0
0
10
20
30
40
50
R_G (Ω)
Fig. 9 - Typical Energy Loss vs. R_g
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
I_CE = 100 A, V_GE = 15 V
1000
td(off)
td(on)
100 _tf
tr
10
0
10
20
30
40
50
R_G (Ω)
Fig. 10 - Typical Switching Time vs. R_g
T_J = 125 °C, L = 200 μH, V_CC = 360 V,
I_CE = 100 A, V_GE = 15 V
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4
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Document Number: 94501
Revision: 04-May-10