BUF642 Datasheet, PDF (5/8 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor

BUF642
Vishay Telefunken
Typical Characteristics (T_case = 25_C unless otherwise specified)
8
6
4
2 ^{0.1 x IC < IB2 < 0.5 x IC}
V_CESat < 2V
0
0
95 10544
100 200 300 400 500 600
V_CE – Collector Emitter Voltage ( V )
Figure 4. V_CEW – Diagram
100
1.76 K/W
10
12.5 K/W
1
25 K/W
0.1
50 K/W
R_thJA = 85 K/W
0.01
0.001
0
95 10545
25 50 75 100 125 150
T_case ( °C )
Figure 7. P_tot vs.T_case
5
I_B=390mA
4
290mA
200mA
3
100mA
2
50mA
1
24mA
0
0
95 10550
4
8
12
16
20
V_CE – Collector Emitter Voltage ( V )
Figure 5. I_C vs. V_CE
10
1A
2A 4A
6A
1
0.1
I_C = 0.5A
0.01
0.01
95 10551
0.1
1
10
I_B – Base Current ( A )
Figure 8. V_CEsat vs. I_B
100
100
75°C
125°C
10V
T_j = 25°C
10
5V
10
V_CE = 2V
1
0.001 0.01
0.1
1
10
95 10552
I_C – Collector Current ( A )
Figure 6. h_FE vs. I_C
Document Number 86511
Rev. 2, 20–Jan–99
1
0.001 0.01
0.1
1
10
95 10553
I_C – Collector Current ( A )
Figure 9. h_FE vs. I_C
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