BUF642 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor

BUF642
Vishay Telefunken
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
T_case = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T_case ≤ 25°C
Maximum Thermal Resistance
T_case = 25°C, unless otherwise specified
Parameter
Junction case
Junction ambient
Test Conditions
Symbol
Value
Unit
V_CEO
400
V
V_CEW
550
V
V_CES
900
V
V_EBO
9
V
I_C
6
A
I_CM
10
A
I_B
3
A
I_BM
6
A
P_tot
70
W
T_j
150
°C
T_stg
–65 to +150 °C
Symbol
Value
Unit
R_thJC
R_thJA
1.78
K/W
85
K/W
Document Number 86511
Rev. 2, 20–Jan–99
www.vishay.de • FaxBack [phone]
1 (8)