BUF642 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor

Switching Characteristics
T_case = 25°C, unless otherwise specified
Parameter
Test Conditions
Resistive load (figure 2)
Turn on time
Storage time
I_C = 1 A; I_B1 = 0.25 A;
–I_B2 = 0.5 A; V_S = 250 V
Fall time
Turn on time
Storage time
I_C = 3 A; I_B1 = 0.6 A;
–I_B2 = 1.5 A; V_S = 250 V
Fall time
Inductive load (figure 3)
Storage time
Fall time
I_C = 1 A; I_B1 = 0.25 A; –I_B2 = 0.5 A;
V_clamp = 300 V; L = 200 mH
Storage time
Fall time
I_C = 3 A; I_B1 = 0.6 A; –I_B2 = 1.5 A;
V_clamp = 300 V; L = 200 mH
BUF642
Vishay Telefunken
Symbol Min Typ Max Unit
t_on
0.3
ms
t_s
2.5
ms
t_f
0.3
ms
t_on
0.5
ms
t_s
2
ms
t_f
0.2
ms
t_s
2.5
ms
t_f
0.25 ms
t_s
2
ms
t_f
0.1
ms
94 8863
+ V_S2 10 V
3 Pulses
t_p
+_T
0.1
+t_p 10 ms
w I_B
I_C
5
I_C
I_C L_C
+ V_S1
0 to
30
V+
V_CE
V_(BR)CEO
I_(BR)R
100 mW
Figure 1. Test circuit for V_(BR)CE0
I_measure
V_(BR)CEO
Document Number 86511
Rev. 2, 20–Jan–99
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