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| BUF642 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor | |||
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BUF642
Vishay Telefunken
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Collector cut-off current
VCES = 900 V
ICES
50 mA
VCES = 900 V; Tcase = 150°C
ICES
200 mA
VCEO = 400 V
ICEO
100 mA
Collector-emitter
IC = 500 mA; L = 125 mH;
V(BR)CEO 400
V
breakdown voltage (figure 1)
Imeasure = 100 mA
Emitter-base breakdown voltage IE = 1 mA
V(BR)EBO 9
V
Collector-emitter
saturation voltage
IC = 1 A; IB = 0.25 A
IC = 3 A; IB = 1 A
VCEsat
VCEsat
0.5 V
1V
Base-emitter saturation voltage IC = 1 A; IB = 0.25 A
VBEsat
1V
IC = 3 A; IB = 1 A
VBEsat
1.5 V
DC forward current transfer ratio VCE = 2 V; IC = 10 mA
hFE
15
VCE = 2 V; IC = 1 A
hFE
15
VCE = 2 V; IC = 3 A
hFE
8
VCE = 2 V; IC = 6 A
hFE
4
Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2.5 A; VCEW 550
V
IB1 = 0.5 A; âIB2 = 0.5 A;
âVBE(off) = 5 V
www.vishay.de ⢠FaxBack +1-408-970-5600
2 (8)
Document Number 86511
Rev. 2, 20âJanâ99
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